NOT KNOWN FACTS ABOUT GERMANIUM

s is the fact that in the substrate product. The lattice mismatch leads to a significant buildup of strain Electricity in Ge layers epitaxially grown on Si. This pressure energy is generally relieved by two mechanisms: (i) generation of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of equally the subst

The present calculations were performed by the method of projector augmented-wave pseudopotentials with density purposeful theory coded from the Vienna ab inito simulation package31, 32. With the electrons’ exchange correlation Vitality, the Perdew–Burke–Ernzerhof perform was used33. The kinetic Power cutoff is preferred as 550 eV to the ai